NCE3080K Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

NCE3080K - N-Channel Enhancement Mode Power MOSFET

Description

The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =80A RDS(ON) < 6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

Datasheet Details

Part number	NCE3080K
Manufacturer	NCEPOWER
File Size	318.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3080K Datasheet
Additional preview pages of the NCE3080K datasheet.

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Full PDF Text Transcription

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Pb Free Product http://www.ncepower.com NCE3080K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =80A RDS(ON) < 6.

Published: Sep 5, 2014 |