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NCE3407 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

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Datasheet preview – NCE3407

Datasheet Details

Part number NCE3407
Manufacturer NCEPOWER
File Size 268.51 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3407 Datasheet
Additional preview pages of the NCE3407 datasheet.

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Full PDF Text Transcription

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Pb Free Product http://www.ncepower.com NCE3407 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S G D GENERAL FEATURES ● VDS = -30V,ID = -4.1A RDS(ON) < 87mΩ @ VGS=-4.
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