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NCE55P30 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-55V,ID =-30A RDS(ON).

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Datasheet Details

Part number NCE55P30
Manufacturer NCE Power
File Size 288.22 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE55P30 Datasheet

Full PDF Text Transcription for NCE55P30 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE55P30. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE55P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provid...

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tion The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

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