NCE6090 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =60V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche v.
General Features
* VDS =60V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic diagram
* High density .
Image gallery
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