NCE75H35T Description
The NCE75H35T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
NCE75H35T Key Features
- VDSS =75V,ID =350A RDS(ON) < 2.5mΩ @ VGS=10V （Typ：1.9 mΩ）
- Good stability and uniformity with high EAS
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Excellent package for good heat dissipation
- Automotive