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NCE Power Semiconductor

BSS138 Datasheet Preview

BSS138 Datasheet

N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
BSS138
NCE N-Channel Enhancement Mode Power MOSFET
General Features
VDS = 50V,ID = 0.22A
RDS(ON) < 3@ VGS=5V
RDS(ON) < 2@ VGS=10V
Lead free product is acquired
Surface mount package
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers , display,
memories, transistors, etc.
Battery operated systems
Solid-state relays
Schematic diagram
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
138
BSS138
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
50
±20
0.22
0.88
0.35
-55 To 150
350
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=50V,VGS=0V
Min Typ Max Unit
50 65
--
-
0.5
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

BSS138 Datasheet Preview

BSS138 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
VSD
IS
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=5V, ID=0.05A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
VDS=25V,VGS=0V,
F=1.0MHz
VDD=30V,ID=0.22A
VGS=10V,RGEN=6
VDS=25V,ID=0.3A,
VGS=10V
VGS=0V,IS=0.22A
-
Pb Free Product
BSS138
- - ±100 nA
0.8 1.2
- 1.2
-1
0.12 -
1.6
3
2
-
V
S
- 27
- 12
-6
-
-
-
PF
PF
PF
- 2.5
-6
- 20
-7
-
-
-
-
- 1.7 2.4
nS
nS
nS
nS
nC
- - 1.3
V
- - 0.22 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number BSS138
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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