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NCE0103 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 100V,ID = 3A RDS(ON).

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Datasheet Details

Part number NCE0103
Manufacturer NCE Power Semiconductor
File Size 333.00 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0103 Datasheet

Full PDF Text Transcription for NCE0103 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE0103. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE0103 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide ...

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ion The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.