NCE02H10T mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =200V,ID =100A RDS(ON) <18mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good sta.
General Features
* VDS =200V,ID =100A RDS(ON) <18mΩ @ VGS=10V
* High density cell design for ultra low Rdson <.
The NCE02H10T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =200V,ID =100A RDS(ON) <18mΩ @ VGS=10V
* High density cell d.
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