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NCE02H10T - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE02H10T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =200V,ID =100A RDS(ON).

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Datasheet Details

Part number NCE02H10T
Manufacturer NCE Power Semiconductor
File Size 337.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE02H10T Datasheet
Additional preview pages of the NCE02H10T datasheet.

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http://www.ncepower.com Pb Free Product NCE02H10T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE02H10T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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