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NCE Power Semiconductor
NCE Power Semiconductor

NCE05N65K Datasheet Preview

NCE05N65K Datasheet

N-Channel Super Junction Power MOSFET

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NCE05N65K pdf
NCE05N65INCE05N65K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON)
ID
650
900
5
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE05N65I
TO-251
NCE05N65I
NCE05N65K
TO-252
NCE05N65K
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
TO-251
TO-252
Value
650
±30
5
3
15
50
50
0.4
130
5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.2



NCE Power Semiconductor
NCE Power Semiconductor

NCE05N65K Datasheet Preview

NCE05N65K Datasheet

N-Channel Super Junction Power MOSFET

No Preview Available !

NCE05N65K pdf
NCE05N65INCE05N65K
Parameter
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
EAR
TJ,TSTG
Symbol
RthJC
RthJA
Value
0.4
-55...+150
Value
2.5
75
Unit
mJ
°C
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(Tc=25)
IDSS
VDS=650V,VGS=0V
Zero Gate Voltage Drain Current(Tc=125)
IDSS
VDS=650V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±30V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID = 3A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=480V,ID=5A,
VGS=10V
Intrinsic gate resistance
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=380V,ID=5A,
RG=18,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward On Voltage
VSD Tj=25°C,ISD=5A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Min Typ
650
2.5 3
850
5
520
52
4.5
12
2.2
4.5
2.6
6
2.5
55
9
1
200
1.6
15
Max
1
50
±100
3.5
900
25
80
14
5
15
1.3
Unit
V
μA
μA
nA
V
m
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
v1.2


Part Number NCE05N65K
Description N-Channel Super Junction Power MOSFET
Maker NCE Power Semiconductor
Total Page 8 Pages
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