NCE1012E Key Features
- High power and current handing capability
- Lead free product is acquired
- Gate-Source ESD protection
- Battery operated systems
- Load/ power switching cell phones pagers
- Power supply converter circuits
NCE1012E is N-Channel Enhancement Mode Power MOSFET manufactured by NCE Power Semiconductor.
| Part Number | Description |
|---|---|
| NCE10G120 | Trench NPT IGBT |
| NCE11N60 | N-Channel Super Junction Power MOSFET |
| NCE11N60D | N-Channel Super Junction Power MOSFET |
| NCE11N60F | N-Channel Super Junction Power MOSFET |
| NCE11N60T | N-Channel Super Junction Power MOSFET |
The NCE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application.