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NCE2301 - NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet preview – NCE2301

Datasheet Details

Part number NCE2301
Manufacturer NCE Power Semiconductor
File Size 287.93 KB
Description NCE P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2301 Datasheet
Additional preview pages of the NCE2301 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.
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