p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -2 A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
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S Schematic diagram
* High power and current handing capability
* Lead fr.
General Features
* VDS = -20V,ID = -2 A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
D G
S Schematic di.
The NCE2301D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
* VDS = -20V,ID .
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