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NCE2301E - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = -20V,ID =-2.6A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number NCE2301E
Manufacturer NCE Power Semiconductor
File Size 296.83 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2301E Datasheet

Full PDF Text Transcription for NCE2301E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE2301E. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE2301E NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301E uses advanced trench technology to provide excellent...

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tion The NCE2301E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-2.6A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.

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