Datasheet4U Logo Datasheet4U.com

NCE2302 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 3D 2302 G1 2S Marking and pin assignment.

📥 Download Datasheet

Datasheet preview – NCE2302

Datasheet Details

Part number NCE2302
Manufacturer NCE Power Semiconductor
File Size 282.60 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2302 Datasheet
Additional preview pages of the NCE2302 datasheet.

📁 Similar Datasheet

  • NCE2302D - N-Channel 20V MOSFET (VBsemi)
  • NCE2025I - N-Channel MOSFET (VBsemi)
  • NCE2025S - N-Channel MOSFET (VBsemi)
  • NCE20H11 - N-Channel 20V MOSFET (VBsemi)
  • NCE0103 - N-Channel 100V MOSFET (VBsemi)
  • NCE0157A2 - N-Channel Power MOSFET (VBsemi)
  • NCE01H16 - N-Channel MOSFET (VBsemi)
  • NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • NCE1520 - N-Channel 150-V MOSFET (VBsemi)
  • NCE1540KA - N-Channel 150V MOSFET (VBsemi)
Other Datasheets by NCE Power Semiconductor
  • NCE2302B - N-Channel Enhancement Mode Power MOSFET
  • NCE2302C - N-Channel Enhancement Mode Power MOSFET
  • NCE2301 - NCE P-Channel Enhancement Mode Power MOSFET
  • NCE2301A - P-Channel Enhancement Mode Power MOSFET
  • NCE2301B - P-Channel Enhancement Mode Power MOSFET
  • NCE2301C - P-Channel Enhancement Mode Power MOSFET
  • NCE2301D - P-Channel Enhancement Mode Power MOSFET
  • NCE2301E - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com Pb Free Product NCE2302 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.
Published: |