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NCE2303 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -2.0A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet Details

Part number NCE2303
Manufacturer NCE Power Semiconductor
File Size 252.60 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2303 Datasheet

Full PDF Text Transcription for NCE2303 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE2303. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE2303 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2303 uses advanced trench technology to provide excellent R...

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ion The NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. D G General Features ● VDS = -30V,ID = -2.0A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.

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