NCE2305 - NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -20V,ID = -4.1A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE2305
Manufacturer	NCE Power Semiconductor
File Size	301.75 KB
Description	NCE P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2305 Datasheet
Additional preview pages of the NCE2305 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2305 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.

Published: May 22, 2015 |