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NCE2312 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram Marking and pin assignment.

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Datasheet preview – NCE2312

Datasheet Details

Part number NCE2312
Manufacturer NCE Power Semiconductor
File Size 291.37 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2312 Datasheet
Additional preview pages of the NCE2312 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE2312 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. General Features ● VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.
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