NCE3080I - N-Channel Enhancement Mode Power MOSFET

Description

The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =80A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3080I
Manufacturer	NCE Power Semiconductor
File Size	344.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3080I Datasheet
Additional preview pages of the NCE3080I datasheet.

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http://www.ncepower.com Pb Free Product NCE3080I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.

Published: May 22, 2015 |