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NCE3080IA - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =80A RDS(ON).

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Datasheet Details

Part number NCE3080IA
Manufacturer NCE Power Semiconductor
File Size 283.06 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3080IA Datasheet

Full PDF Text Transcription for NCE3080IA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE3080IA. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE3080IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080IA uses advanced trench technology and design to prov...

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ption The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.

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