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NCE Power Semiconductor

NCE30H32WD Datasheet Preview

NCE30H32WD Datasheet

N-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE30H32WD
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE30H32WD uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V ,ID =320A
RDS(ON) < 1.6m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-263T-2L top view
100% UIS TESTED!
100% Vds TESTED!
Package Marking and Ordering Information
Device Marking
NCE30H32WD
Device
NCE30H32WD
Device Package
TO-263T-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous (Silicon Limited)
Drain Current-Continuous(TC=100) (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID (100)
IDM
PD
EAS
TJ,TSTG
Limit
30
±20
320
226
1280
272
1.81
1600
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.55 /W
Wuxi NCE Power Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE30H32WD Datasheet Preview

NCE30H32WD Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Electrical Characteristics (TA=25unless otherwise noted)
Pb Free Product
NCE30H32WD
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
30 - V
- - 1 μA
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=160A
VDS=5V,ID=160A
1.0 1.6
- 1.2
50 -
2.5
1.6
-
V
m
S
Clss
Coss
VDS=15V,VGS=0V,
F=1.0MHz
- 13873
- 1672
-
-
PF
PF
Crss
- 1508
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V,RL=15,
RG=2.5,VGS=10V
ID=160A,VDD=15V,VGS=10V
-
-
-
-
-
-
-
18
200
85
125
231
27.5
55
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=160A
- 0.85 1.2
V
IS - - 320 A
trr
TJ = 25°C, IF = 160A
- 70
Qrr
di/dt = 100A/μs(Note3)
- 180
nS
nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
v1.0


Part Number NCE30H32WD
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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