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NCE3400A - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=10V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.
  • PWM.

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Datasheet Details

Part number NCE3400A
Manufacturer NCE Power Semiconductor
File Size 247.58 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3400A Datasheet

Full PDF Text Transcription for NCE3400A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE3400A. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE3400A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3400A uses advanced trench technology to provide excellent...

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tion The NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 42mΩ @ VGS=4.

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