n-channel enhancement mode power mosfet.
* VDS = 30V,ID = 5.8A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=10V
D G
S Schematic diagram
* High power and current handing capa.
* Load switch
* Power management
SOT-23 top view
Package Marking and Ordering Information
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Dev.
The NCE3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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