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NCE3407A - NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE3407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.3A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON).

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Datasheet preview – NCE3407A

Datasheet Details

Part number NCE3407A
Manufacturer NCE Power Semiconductor
File Size 315.66 KB
Description NCE P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3407A Datasheet
Additional preview pages of the NCE3407A datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3407A NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.3A RDS(ON) < 85mΩ @ VGS=-4.
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