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NCE3407AY - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE3407AY uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -4.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON).

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Datasheet Details

Part number NCE3407AY
Manufacturer NCE Power Semiconductor
File Size 251.96 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3407AY Datasheet

Full PDF Text Transcription for NCE3407AY (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE3407AY. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE3407AY NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3407AY uses advanced trench technology to provide excelle...

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ption The NCE3407AY uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -4.3A RDS(ON) < 90mΩ @ VGS=-4.

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