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NCE3417 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -12V,ID = -4.4A RDS(ON) < 56mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin Assignment.

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Datasheet Details

Part number NCE3417
Manufacturer NCE Power Semiconductor
File Size 275.08 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3417 Datasheet

Full PDF Text Transcription for NCE3417 (Reference)

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http://www.ncepower.com Pb Free Product NCE3417 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3417 uses advanced trench technology to provide excellent R...

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ion The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -4.4A RDS(ON) < 56mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.