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NCE4012S - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE4012S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =40V,ID =12A RDS(ON).

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Datasheet Details

Part number NCE4012S
Manufacturer NCE Power Semiconductor
File Size 421.82 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4012S Datasheet

Full PDF Text Transcription for NCE4012S (Reference)

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http://www.ncepower.com Pb Free Product NCE4012S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4012S uses advanced trench technology and design to provid...

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tion The NCE4012S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =12A RDS(ON) <12mΩ @ VGS=10V (Typ. 8.4 mΩ) RDS(ON) <18mΩ @ VGS=4.5V (Typ. 12.