n-channel enhancement mode power mosfet.
* VDS =40V,ID =120A RDS(ON) <4 mΩ @ VGS=10V RDS(ON) <7 mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage an.
General Features
* VDS =40V,ID =120A RDS(ON) <4 mΩ @ VGS=10V RDS(ON) <7 mΩ @ VGS=4.5V
* High density cell desi.
The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =40V,ID =120A RDS(ON) <4 mΩ @ VGS=10V RDS(ON) <7 mΩ @ VGS=4.5V
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