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NCE Power Semiconductor
NCE Power Semiconductor

NCE40H19 Datasheet Preview

NCE40H19 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

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NCE40H19 pdf
http://www.ncepower.com
Pb Free Product
NCE40H19
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE40H19 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =40V,ID =190A
RDS(ON) < 3.5m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE40H19
NCE40H19
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
40
±20
190
134
750
220
1.47
1400
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0



NCE Power Semiconductor
NCE Power Semiconductor

NCE40H19 Datasheet Preview

NCE40H19 Datasheet

NCE N-Channel Enhancement Mode Power MOSFET

No Preview Available !

NCE40H19 pdf
http://www.ncepower.com
Pb Free Product
NCE40H19
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.68 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=40V,VGS=0V
40 - V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 2.4 3.5
m
Forward Transconductance
gFS
VDS=50V,ID=75A
170 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 6500
- 916
-
-
PF
PF
Crss
- 780
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
- 26
VDD=30V,ID=2A,RL=15- 24
VGS=10V,RG=2.5
- 91
-
-
-
nS
nS
nS
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tf
- 39
-
nS
Qg
Qgs
VDS=30V,ID=30A,
VGS=10V
- 163
- 31
Qgd - 64
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
-
1.2 V
Diode Forward Current (Note 2)
IS
- - 190
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 42
60
nS
Qrr
di/dt = 100A/μs(Note3)
- 66
80
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=20V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE40H19
Description NCE N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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