NCE40H19 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =40V,ID =190A RDS(ON) < 3.5mΩ @ VGS=10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and c.
General Features
* VDS =40V,ID =190A RDS(ON) < 3.5mΩ @ VGS=10V
Schematic diagram
* High density cell design .
Image gallery
Download