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NCE40H21C - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE40H21C
Manufacturer	NCE Power Semiconductor
File Size	440.46 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40H21C-NCEPowerSemiconductor.pdf

NCE40H21C Product details

Description

The NCE40H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =40V ,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |