Datasheet Details
| Part number | NCE4688 |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 436.96 KB |
| Description | N & P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE4688 Datasheet
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General Description
The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Key Features
- N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram.
- P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width 4688 NCE4688 SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless o.