NCE4688 - N & P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCE4688
Manufacturer	NCE Power Semiconductor
File Size	436.96 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE4688-NCEPowerSemiconductor.pdf

The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram.
P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width 4688 NCE4688 SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless o.

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Published: Jun 2, 2018 |