900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






NCE Power Semiconductor

NCE6003M Datasheet Preview

NCE6003M Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE6003M
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6003M uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other switching application.
General Feature
VDS =60V,ID =3.0A
RDS(ON) <100m@ VGS=10V
RDS(ON) < 120m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface mount package
Application
Battery switch
DC/DC converter
D
G
S
Schematic diagram
SOT-89 -3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6003M
NCE6003M
SOT-89-3L
Reel Size
Ø180mm
Tape width
12mm
Quantity
1000units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
3
10
1.7
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
73.5 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
Min Typ Max Unit
60 65
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE6003M Datasheet Preview

NCE6003M Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE6003M
Condition
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=3A
VGS=4.5V, ID=3A
VDS=15V,ID=2A
VDS=30V,VGS=0V,
F=1.0MHz
Min Typ Max
- - ±100
Unit
nA
1 1.2 2.0
- 73 100
- - 120
2-
-
V
m
m
S
- 247
- 34
- 19.5
-
-
-
PF
PF
PF
VDD=30V,ID=1.5A
VGS=10V,RGEN=1
VDS=30V,ID=3A,
VGS=4.5V
-6
- 15
- 15
- 10
-6
-1
- 1.3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=3A
- - 1.2
--
3
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE6003M
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
PDF Download

NCE6003M Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 NCE6003 NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
2 NCE6003M N-Channel Enhancement Mode Power MOSFET
NCE Power Semiconductor
3 NCE6003Y N-Channel Enhancement Mode Power MOSFET
NCE Power Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy