Full PDF Text Transcription for NCE6003M (Reference)
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http://www.ncepower.com Pb Free Product NCE6003M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003M uses advanced trench technology to provide excellent...
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tion The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.
NCE6003M Datasheet
