900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






NCE Power Semiconductor

NCE6012AS Datasheet Preview

NCE6012AS Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE6012AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6012AS uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 60V,ID =12A
RDS(ON) < 11m@ VGS=10V (Typ:8.6m)
RDS(ON) < 14m@ VGS=4.5V (Typ:10.3m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Schematic diagram
Application
Power switching application
Load switch
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6012AS
NCE6012AS
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
12
8.5
120
3
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
42 /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE6012AS Datasheet Preview

NCE6012AS Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE6012AS
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=12A
VGS=4.5V, ID=6A
VDS=5V,ID=12A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=30V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V, RL=1
VGS=10V,RGEN=3
VDS=30V,ID=12A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=12A
IS
trr TJ = 25°C, IF=12A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max Unit
60 - V
- - 1 μA
- - ±100 nA
0.9 1.3
- 8.6
- 10.3
40 -
1.8
11
14
-
V
m
m
S
- 4100
- 298
- 229
-
-
-
PF
PF
PF
- 8.5
-7
- 40
- 15
- 93
- 9.7
- 20
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
12
- 32
-
- 45
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE6012AS
Description N-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
PDF Download

NCE6012AS Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 NCE6012AS N-Channel Enhancement Mode Power MOSFET
NCE Power Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy