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NCE6012AS - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE6012AS
Manufacturer	NCE Power Semiconductor
File Size	405.99 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6012AS-NCEPowerSemiconductor.pdf

NCE6012AS Product details

Description

The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jun 2, 2018 |