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NCE Power Semiconductor

NCE60P04R Datasheet Preview

NCE60P04R Datasheet

P-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE60P04R
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE60P04R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for use as a load switch or in PWM
applications.
General Features
VDS =-60V,ID =-4.3A
RDS(ON) <120m@ VGS=-10V
RDS(ON) <170m@ VGS=-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Load switch
PWM application
SOT-223 top view
Package Marking and Ordering Information
Device Marking
NCE60P04R
Device
NCE60P04R
Device Package
SOT-223-3L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-60
±20
-4.3
-20
3.1
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-60V,VGS=0V
40.3 /W
Min Typ Max Unit
-60 -
-
V
- - -1 μA
Wuxi NCE Power Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE60P04R Datasheet Preview

NCE60P04R Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
trr
Qrr
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS=-5V,ID=-4A
VDS=-30V,VGS=0V,
F=1.0MHz
VDD=-30V, RL=7.5
VGS=-10V,RG=3
VDS=-30,ID=-4A,
VGS=-10V
VGS=0V,IS=-4A
TJ = 25°C, IF =- 4A
di/dt = -100A/μs(Note3)
Pb Free Product
NCE60P04R
- - ±100 nA
-1.5 -2.2
- 106
- 135
- 10
-3.0
120
170
-
V
m
m
S
- 930
- 85
- 35
-
-
-
PF
PF
PF
-8
-4
- 32
-7
- 25
-3
-7
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- -1.2
- - -4.3
- 25
- 31
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
Page 2
v1.0


Part Number NCE60P04R
Description P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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