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NCE60P04Y - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

Key Features

  • VDS =-60V,ID =-4A RDS(ON).

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Datasheet Details

Part number NCE60P04Y
Manufacturer NCE Power Semiconductor
File Size 345.47 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60P04Y Datasheet

Full PDF Text Transcription for NCE60P04Y (Reference)

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http://www.ncepower.com Pb Free Product NCE60P04Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to prov...

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ption The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.