NCE60P04Y - P-Channel Enhancement Mode Power MOSFET
NCE Power Semiconductor
General Description
The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.
Full PDF Text Transcription for NCE60P04Y (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NCE60P04Y. For precise diagrams, and layout, please refer to the original PDF.
http://www.ncepower.com Pb Free Product NCE60P04Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to prov...
View more extracted text
ption The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.