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NCE Power Semiconductor
NCE Power Semiconductor

NCE60R900 Datasheet Preview

NCE60R900 Datasheet

N-Channel Super Junction Power MOSFET

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NCE60R900 pdf
NCE60R900DNCE60R900, NCE60R900F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS@Tjmax
RDS(ON)
ID
650
900
5
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R900D
TO-263
NCE60R900D
NCE60R900
TO-220
NCE60R900
NCE60R900F
TO-220F
NCE60R900F
TO-263 TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID =5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
NCE60R900
NCE60R900F
NCE60R900D
600
±30
5 5*
3 3*
15 15*
48
49 29
0.39 0.23
135
2.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0



NCE Power Semiconductor
NCE Power Semiconductor

NCE60R900 Datasheet Preview

NCE60R900 Datasheet

N-Channel Super Junction Power MOSFET

No Preview Available !

NCE60R900 pdf
NCE60R900DNCE60R900, NCE60R900F
Parameter
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
Symbol
EAR
Value
0.4
Unit
mJ
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
TJ,TSTG
Symbol
RthJC
RthJA
-55...+150
°C
NCE60R900
NCE60R900D
2.55
62
NCE60R900F
4.3
80
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=3A
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 3A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
Qgd
VDS=480V,ID=5A,
VGS=10V
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=5A,
RG=18,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak reverse recovery current
ISD
ISDM
TC=25°C
VSD Tj=25°C,ISD=5A,VGS=0V
trr
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Min Typ
600
2.5 3
780
4.8
460
45
3.5
10
1.6
4
2.5
6
3
50
9
1
250
2.2
15
Max
1
50
±100
3.5
900
20
60
15
5
15
1.3
Unit
V
μA
μA
nA
V
m
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
v1.0


Part Number NCE60R900
Description N-Channel Super Junction Power MOSFET
Maker NCE Power Semiconductor
Total Page 10 Pages
PDF Download
NCE60R900 pdf
NCE60R900 Datasheet PDF
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