Download the NCE65T180 datasheet PDF.
This datasheet also covers the NCE65T180D variant, as both devices belong to the same n-channel super junction power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Key Features
New technology for high voltage device.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant
VDS RDS(ON) MAX ID
650 180 21
V mΩ A.
Note: The manufacturer provides a single datasheet file (NCE65T180D-NCEPowerSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for NCE65T180 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NCE65T180. For precise diagrams, and layout, please refer to the original PDF.
NCE65T180D,NCE65T180,NCE65T180F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and d...
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es of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
NCE65T180 Datasheet
