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NCE6890 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 68V,ID =90A RDS(ON) < 7.5mΩ @ VGS=10V (Typ:6.5mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE6890
Manufacturer NCE Power Semiconductor
File Size 336.87 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6890 Datasheet

Full PDF Text Transcription for NCE6890 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE6890. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE6890 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide ...

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ion The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 68V,ID =90A RDS(ON) < 7.5mΩ @ VGS=10V (Typ:6.

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