* VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) S Schematic diagram
* Special process technology for high ESD capability
* High density cell desig.

D G General Features
* VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) S Schematic diagram
* Specia.

The NCE70N100I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features
* VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) S Sch.

NCE7075

NCE7075K

NCE7080

NCE70R180

NCE70R180F

NCE70R1K2

NCE70R1K2D

NCE70R1K2F

NCE70R1K2I

NCE70R1K2K

NCE70R260

NCE70R260D

NCE70R260F