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NCE75H35TC - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in automotive applications and a wide variety of other applications.

Key Features

  • VDSS =75V,ID =350A RDS(ON) < 2.2mΩ @ VGS=10V （Typ：1.7 mΩ）.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE75H35TC
Manufacturer NCE Power Semiconductor
File Size 334.26 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE75H35TC Datasheet

Full PDF Text Transcription for NCE75H35TC (Reference)

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http://www.ncepower.com Pb Free Product NCE75H35TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to pr...

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iption The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =350A RDS(ON) < 2.2mΩ @ VGS=10V （Typ：1.

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