NCE80T560D,NCE80T560,NCE80T560F
Parameter
Symbol
NCE80T560D
NCE80T560F
NCE80T560
Unit
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
50
15
-55...+150
V/ns
V/ns
°C
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Symbol
NCE80T560D
NCE80T560F
NCE80T560
Unit
Thermal Resistance，Junction-to-Case（Maximum）
RthJC
0.95
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJA
62
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
3.76 °C /W
80 °C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=800V,VGS=0V
VDS=800V,VGS=0V
800
V
1 μA
100 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3 3.5
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4A
480 560 mΩ
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
1200
75
0.3
1390
pF
pF
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=9A,
Qgs
VGS=10V
Qgd
25 42
8
8.5
nC
nC
nC
Switching times
Turn-on Delay Time
td(on)
16 nS
Turn-on Rise Time
tr VDD=480V,ID=5A,
11 nS
Turn-Off Delay Time
td(off)
RG=2.3Ω,VGS=10V
58 nS
Turn-Off Fall Time
tf
10 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
9A
36 A
Forward On Voltage
VSD Tj=25°C,ISD=9A,VGS=0V
0.9 1.2
V
Reverse Recovery Time
trr
240 nS
Reverse Recovery Charge
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
1.1
uC
Peak Reverse Recovery Current
Irrm
9A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Co., Ltd
Page 2
http://www.ncepower.com
v1.0
