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NCE Power Semiconductor

NCE80T560D Datasheet Preview

NCE80T560D Datasheet

N-Channel Super Junction Power MOSFET

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NCE80T560D,NCE80T560,NCE80T560F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON)TYP
ID
800 V
480 mΩ
9A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE80T560D
TO-263
NCE80T560D
NCE80T560
TO-220
NCE80T560
NCE80T560F
TO-220F
NCE80T560F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE80T560D
NCE80T560F
NCE80T560
800
±30
9 9*
6 6*
36 36*
131 33.2
1.05 0.265
290
2.8
1.4
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
v1.0




NCE Power Semiconductor

NCE80T560D Datasheet Preview

NCE80T560D Datasheet

N-Channel Super Junction Power MOSFET

No Preview Available !

NCE80T560D,NCE80T560,NCE80T560F
Parameter
Symbol
NCE80T560D
NCE80T560F
NCE80T560
Unit
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
50
15
-55...+150
V/ns
V/ns
°C
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Symbol
NCE80T560D
NCE80T560F
NCE80T560
Unit
Thermal ResistanceJunction-to-CaseMaximum
RthJC
0.95
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
3.76 °C /W
80 °C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=800V,VGS=0V
VDS=800V,VGS=0V
800
V
1 μA
100 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3 3.5
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4A
480 560 mΩ
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
1200
75
0.3
1390
pF
pF
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=9A,
Qgs
VGS=10V
Qgd
25 42
8
8.5
nC
nC
nC
Switching times
Turn-on Delay Time
td(on)
16 nS
Turn-on Rise Time
tr VDD=480V,ID=5A,
11 nS
Turn-Off Delay Time
td(off)
RG=2.3Ω,VGS=10V
58 nS
Turn-Off Fall Time
tf
10 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
9A
36 A
Forward On Voltage
VSD Tj=25°C,ISD=9A,VGS=0V
0.9 1.2
V
Reverse Recovery Time
trr
240 nS
Reverse Recovery Charge
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
1.1
uC
Peak Reverse Recovery Current
Irrm
9A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Co., Ltd
Page 2
http://www.ncepower.com
v1.0


Part Number NCE80T560D
Description N-Channel Super Junction Power MOSFET
Maker NCE Power Semiconductor
Total Page 10 Pages
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