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NCE8290

The NCE8290 is N-Channel Enhancement Mode Power MOSFET designed by NCE Power Semiconductor.

Product Overview

NCE Power Semiconductor

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NCE8290 N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE8290

Datasheet Details

Part number	NCE8290
Manufacturer	NCE Power Semiconductor
File Size	335.59 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8290-NCEPowerSemiconductor.pdf
Additional preview pages of the NCE8290 datasheet.

Product details

Description

The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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Published: Jan 10, 2016 |