NCE8290 Datasheet PDF - NCE Power Semiconductor N-Channel Enhancement Mode Power MOSFET Specs

NCE8290 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

Datasheet Details

Part number	NCE8290
Manufacturer	NCE Power Semiconductor
File Size	335.59 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8290 Datasheet
Additional preview pages of the NCE8290 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.

Published: Jan 10, 2016 |