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NCE8290B - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE8290B
Manufacturer	NCE Power Semiconductor
File Size	354.26 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8290B-NCEPowerSemiconductor.pdf

NCE8290B Product details

Description

The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =82V,ID =90A RDS(ON) < 8.8 mΩ @ VGS=10V (Typ:7.5mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Special designed for convertors and power controls.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |