NCE85H21TC Datasheet | NCE Power Semiconductor

Description The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features - VDSS =85V,ID =210A RDS(ON) < 3.9mΩ @ VGS=10V - Good stability and uniformity with high EAS - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Schematic diagram Application - Automotive applications - Hard switched and high frequency circuits - Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Marking and pin assignment TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note...