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NCEP15T11JD Datasheet

Manufacturer: NCE Power Semiconductor
NCEP15T11JD datasheet preview

Datasheet Details

Part number NCEP15T11JD
Datasheet NCEP15T11JD-NCEPowerSemiconductor.pdf
File Size 320.91 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
NCEP15T11JD page 2 NCEP15T11JD page 3

NCEP15T11JD Overview

The NCEP15T11JD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP15T11JD Key Features

  • VDS =135V,ID =110A RDS(ON) <7.0mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Tape width
  • Quantity
NCE Power Semiconductor logo - Manufacturer

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NCEP15T11JD Distributor

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