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NCE Power Semiconductor

NCEP4085EG Datasheet Preview

NCEP4085EG Datasheet

N-Channel Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCEP4085EG
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP4085EG uses Super Trench technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency
switching and synchronous rectification. It is ESD protested.
General Features
VDS =40V,ID =85A
RDS(ON)=3.0m(typical) @ VGS=10V
RDS(ON)=4.0m(typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
ESD protection : HBM Class 2
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
Schematic Diagram
DDDD
DDDD
SSSG
GSSS
Top View
Bottom View
100% UIS TESTED!
100% Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP4085EG
NCEP4085EG
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous (Silicon Limited)
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current (Package Limited)
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
40
±20
85
60
260
65
0.52
288
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.92 /W
Wuxi NCE Power Co., Ltd
Page 1
V1.0




NCE Power Semiconductor

NCEP4085EG Datasheet Preview

NCEP4085EG Datasheet

N-Channel Power MOSFET

No Preview Available !

http://www.ncepower.com
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=40V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=20V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=20V,ID=20A
VGS=10V,RG=1.6
VDS=20V,ID=20A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=85A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 500A/μs(Note3)
Pb Free Product
NCEP4085EG
Min Typ Max Unit
40 - V
- - 1 μA
- - ±10 μA
1.0 1.5
- 3.0
- 4.0
40
2.2
3.3
4.3
-
V
m
m
S
- 2100 2600
- 639 800
- 23.6 29
PF
PF
PF
- 7.5
-
-4
-
- 26
-
- 3.3
-
- 34.3 47
- 7.1
- 3.5
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 85
- 19
-
- 40
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=20V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Part Number NCEP4085EG
Description N-Channel Power MOSFET
Maker NCE Power Semiconductor
Total Page 6 Pages
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