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NCEP4085EG - N-Channel Power MOSFET

General Description

The NCEP4085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =40V,ID =85A RDS(ON)=3.0mΩ (typical) @ VGS=10V RDS(ON)=4.0mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.
  • ESD protection : HBM Class 2.

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Datasheet Details

Part number NCEP4085EG
Manufacturer NCE Power Semiconductor
File Size 380.09 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP4085EG Datasheet

Full PDF Text Transcription for NCEP4085EG (Reference)

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http://www.ncepower.com Pb Free Product NCEP4085EG NCE N-Channel Super Trench Power MOSFET Description The NCEP4085EG uses Super Trench technology that is uniquely optimi...

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on The NCEP4085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. It is ESD protested. General Features ● VDS =40V,ID =85A RDS(ON)=3.0mΩ (typical) @ VGS=10V RDS(ON)=4.0mΩ (typical) @ VGS=4.