NCEP60T18 Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Schematic diagram General Features - VDS =60V,ID =180A RDS(ON) < 2.9mΩ @ VGS=10V (Typ:2.5mΩ) - Excellent gate charge x RDS(on) product - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested Marking and pin...