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DATA SHEET
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings −160 −140/–160 −5.0 −500 −1.0 1.