Download the 2SB1116A datasheet PDF.
This datasheet also covers the 2SB1116 variant, as both devices belong to the same pnp silicon transistors family and are provided as variant models within a single manufacturer datasheet.
General Description
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.
Key Features
Low VCE(sat)
VCE(sat) =.
0.20 V TYP. (IC =.
1.0 A, IB =.
50 mA).
High PT in small dimension with general-purpose
PT = 0.75 W, VCEO =.
Full PDF Text Transcription for 2SB1116A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SB1116A. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat)...
View more extracted text
ER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.0 −1.0 −2.0 0.
2SB1116A Datasheet
