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  NEC Electronic Components Datasheet  

2SC4336 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4336
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SC4336 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
www.DataSheet4U.com
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage
VCE(sat) 0.3 V MAX. (IC = 6.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4336
Isolated TO-220 (MP-45)
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 ±0.2 φ 3.2 ±0.2
4.7 MAX.
3.0 MAX.
0.8 ±0.1
2.54 TYP.
1.3 ±0.2 0.5 ±0.1
1.5 ±0.2
2.54 TYP.
2.5 ±0.1
123
1: Base
2: Collector
3: Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage
VCBO
100
Collector to emitter voltage
VCEO
100
Emitter to base voltage
VEBO
7.0
Collector current (DC)
Collector current (pulse) Note
IC(DC)
IC(pulse)
10
20
Base current (DC)
IB(DC)
6.0
Total power dissipation (TC = 25°C) PT 30
Total power dissipation (TA = 25°C) PT 2.0
Junction temperature
Tj 150
Storage temperature
Tstg 55 to +150
V
V
V
A
A
A
W
W
°C
°C
Note PW 300 µs, Duty Cycle 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17261EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004


  NEC Electronic Components Datasheet  

2SC4336 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SC4336
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
MIN.
Collector to Emitter Voltage
VCEO(SUS) IC = 5.0 A, IB = 0.6 A, L = 1 mH
100
Collector Cut-off Current
VCEX(SUS) IC = 5.0 A, IB1 = IB2 = 0.6 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
ICBO VCB = 100 V, IE = 0
100
ICER
ICEX1
ICEX2
VCE = 100 V, RBE = 50 , TA = 125°C
VCE = 100 V, VBE(OFF) = 1.5 V
VCE = 100 V, VBE(OFF) = 1.5 V,
TA = 125°C
www.DataSheet4U.coEmmitter Cut-off Current
DC Current Gain Note
IEBO VEB = 5.0 V, IC = 0
hFE1 VCE = 2.0 V, IC = 1.0 A
100
hFE2 VCE = 2.0 V, IC = 2.0 A
100
Collector Saturation Voltage Note
hFE3
VCE(sat)1
VCE = 2.0 V, IC = 6.0 A
IC = 6.0 A, IB = 0.3 A
60
Base Saturation Voltage Note
VCE(sat)2
VBE(sat)1
IC = 8.0 A, IB = 0.4 A
IC = 6.0 A, IB = 0.3 A
VBE(sat)2 IC = 8.0 A, IB = 0.4 A
Collector Capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain Bandwidth Product
Turn-on Time
Storage Time
Fall Time
fT VCE = 10 V, IC = 0.5 A
ton IC = 6.0 A, RL = 8.3 ,
tstg IB1 = IB2 = 0.3 A, VCC 50 V
Refer to the test circuit.
tf
Note Pulsed: PW 350 µs, Duty Cycle 2%
TYP.
200
120
150
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
0.3
1.5
0.3
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
hFE CLASSIFICATION
Marking
M
hFE2 100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VIN
PW
PW 50 µs
Duty Cycle 2%
IB1
IB2
VBB ≅ −5 V
RL = 8.3
IC Base current
waveform
IB2
IB1
T.U.T.
VCC 50 V
Collector current
90%
waveform
10%
IC
ton tstg tf
2 Data Sheet D17261EJ1V0DS


Part Number 2SC4336
Description NPN SILICON EPITAXIAL TRANSISTOR
Maker NEC
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2SC4336 Datasheet PDF





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