• Part: 2SC5509
  • Description: NPN SILICON RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 106.56 KB
Download 2SC5509 Datasheet PDF
NEC
2SC5509
FEATURES - Ideal for medium output power amplification - NF = 1.2 d B TYP., Ga = 12 d B TYP. @ VCE = 2 V, IC = 10 m A, f = 2 GHz - Maximum available power gain: MAG = 14 d B TYP. @ VCE = 2 V, IC = 50 m A, f = 2 GHz - f T = 25 GHz technology adopted - Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5509 2SC5509-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form - 8 mm wide embossed taping - Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.3 1.5 100 190 150 - 65 to +150 Unit V V V m A m W °C °C Tj Tstg Note Free Air Because this product uses high-frequency...