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2SD1695 - NPN SILICON EPITAXIAL TRANSISTOR

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode.
  • Low collector saturation voltage.

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Datasheet Details

Part number 2SD1695
Manufacturer NEC
File Size 276.99 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet 2SD1695 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators. PACKAGE DRAWING (UNIT: mm) FEATURES • On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode • Low collector saturation voltage QUALITY GRADES • Standard DataShee DataSheet4U.com Electrode Connection 1. Emitter 2. Collector 3. Base 4.
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